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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF6522 - 70/D The RF MOSFET Line RF Power Field Effect Transistor Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 26 volt base station equipment. * Specified Performance @ Full GSM Band, 921 - 960 MHz, 26 Volts Output Power, P1dB -- 80 Watts (Typ) Power Gain @ P1dB -- 16 dB (Typ) Efficiency @ P1dB -- 58% (Typ) * Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 921 - 960 MHz, 70 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET Freescale Semiconductor, Inc... CASE 465D - 05, STYLE 1 NI - 600 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 65 20 7 159 0.9 - 65 to +150 200 Unit Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 1.1 Unit C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF6522 - 70R3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 400 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 3 -- 2 3 4 0.15 3 4 5 0.6 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 10 1 Vdc Adc Adc Symbol Min Typ Max Unit Freescale Semiconductor, Inc... Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Output Power (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) Common - Source Amplifier Power Gain @ P1dB (Min) (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) Drain Efficiency @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) Drain Efficiency @ P1dB (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) Input Return Loss @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = 921 MHz and 960 MHz f = 940 MHz) Output Mismatch Stress (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz, VSWR = 5:1, All Phase Angles) Ciss Coss Crss -- 41 2.4 130 47 3 -- 52 3.4 pF pF pF P1dB Gps 1 2 IRL 73 14 47 -- 80 16 51 58 -- 18 -- -- W dB % % dB -- -- -- -- - 10 - 15 No Degradation In Output Power Before and After Test (1) Value excludes the input matching. (2) To meet application requirements, Motorola test fixtures have been designed to cover full GSM 900 band ensuring batch - to - batch consistency. MRF6522 - 70R3 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. Vreg VBIAS T1 Gnd Vin Vout R1 R2 R6 VSUPPLY C1 R3 T2 R4 C7 R5 C6 RF Input C5 C8 C3 C12 + C2 C4 C10 C14 C13 RF Output Q1 C9 C11 Freescale Semiconductor, Inc... C1 C2 C3 C4, C6, C14 C5 C7, C8, C13 C9, C10 C11, C12 R1 R2 1.0 F Chip Capacitor (0805) 10 F, 35 Vdc Tantalum Capacitor 100 nF Chip Capacitor 22 pF Chip Capacitors, ACCU - P (0805) 2.7 pF Chip Capacitor, ACCU - P (0805) 4.7 pF Chip Capacitors, ACCU - P (0805) 8.2 pF Chip Capacitors, ACCU - P (0805) 2.2 pF Chip Capacitors, ACCU - P (0805) 10 Chip Resistor (0805) 1.0 k Chip Resistor (0805) R3 R4 R5 R6 T1 T2 1.2 k Chip Resistor (0805) 2.2 k Chip Resistor (0805) 220 Chip Resistor (0805) 5.0 k SMD Potentiometer LP2951 Micro - 8 BC847 SOT - 23 SUBSTRATE GI180 0.8 mm Figure 1. MRF6522 - 70 Test Circuit Schematic VBIAS Ground VSUPPLY C1 R2 R3 R4 R1 T1 C2 R6 C3 C4 R5 C7 C6 C10 C12 C13 C9 C11 STRAP MRF6522 - 70 C14 T2 C5 C8 Q1 Figure 2. MRF6522 - 70 Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF6522 - 70R3 3 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 17.5 IDQ = 600 mA 17.0 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 500 mA 200 mA 16.0 VDS = 26 Vdc f = 921 MHz 15.5 15.0 400 mA 300 mA 18.0 17.8 17.6 17.4 17.2 17.0 16.8 16.6 16.4 16.2 10 Pout, OUTPUT POWER (WATTS) 100 16.0 10 Pout, OUTPUT POWER (WATTS) 100 VDS = 26 Vdc f = 960 MHz 300 mA 200 mA IDQ = 600 mA 500 mA 400 mA 16.5 Freescale Semiconductor, Inc... Figure 3. Power Gain versus Output Power Figure 4. Power Gain versus Output Power 105 115 Pout , OUTPUT POWER (WATTS) 105 3.0 W 95 85 75 65 55 45 18 19 20 IDQ = 400 mA f = 921 MHz 21 22 23 24 25 26 VDD, SUPPLY VOLTAGE (VOLTS) 27 28 2.0 W 4.0 W Pout , OUTPUT POWER (WATTS) Pin = 5.0 W 95 Pin = 5.0 W 85 3.0 W 75 65 55 45 35 18 19 20 IDQ = 400 mA f = 960 MHz 21 22 23 24 25 26 VDD, SUPPLY VOLTAGE (VOLTS) 27 28 2.0 W 4.0 W Figure 5. Output Power versus Supply Voltage Figure 6. Output Power versus Supply Voltage 80 Pout , OUTPUT POWER (WATTS) 70 60 50 40 30 Pout 20 10 0 0 0.5 VDS = 26 Vdc IDQ = 400 mA f = 921 MHz 1.0 1.5 Pin, INPUT POWER (WATTS) 2.0 h 80 70 60 50 40 30 20 10 0 h , EFFICIENCY (%) Figure 7. Efficiency and Output Power versus Input Power MRF6522 - 70R3 4 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 80 Pout , OUTPUT POWER (WATTS) 70 60 50 40 30 20 10 0 0 0.5 VDS = 26 Vdc IDQ = 400 mA f = 960 MHz 1.0 1.5 Pin, INPUT POWER (WATTS) 2.0 h Pout 80 70 60 50 40 30 20 10 0 h , EFFICIENCY (%) h, EFFICIENCY (%) h, EFFICIENCY (%) Freescale Semiconductor, Inc... Figure 8. Efficiency and Output Power versus Input Power 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 13 0.02 0.03 0.06 0.12 0.21 0.38 0.70 1.26 2.26 3.96 Pin, INPUT POWER (WATTS) h VDS = 26 Vdc f = 921 MHz Gps 70 60 50 40 30 20 10 0 Figure 9. Power Gain and Efficiency versus Input Power 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 13 0.02 0.03 0.05 0.10 0.18 0.34 0.62 1.15 2.14 3.70 Pin, INPUT POWER (WATTS) h VDS = 26 Vdc f = 960 MHz Gps 70 60 50 40 30 20 10 0 Figure 10. Power Gain and Efficiency versus Input Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF6522 - 70R3 5 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS -10 IRL, INPUT RETURN LOSS (dB) 18 Gps G ps , GAIN (dB) -15 17 -20 VDS = 26 Vdc IDQ = 400 mA 16 IRL -25 910 920 930 940 950 f, FREQUENCY (MHz) 15 960 970 Freescale Semiconductor, Inc... Figure 11. Performance in Broadband Circuit (at Small Signal) MRF6522 - 70R3 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. Zload 960 MHz f = 925 MHz 960 MHz Zsource f = 925 MHz Freescale Semiconductor, Inc... Zo = 5 VSUPPLY = 26 Vdc, IBIAS = 400 mA, CW = Room Temperature f MHz 925 940 960 Zsource 2.65 - j2.53 2.67 - j2.14 2.85 - j1.87 Zload 1.62 + j0.2 1.56 + j0.34 1.55 + j0.2 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF6522 - 70R3 7 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M 3 (FLANGE) NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 1.065 1.075 0.380 0.390 0.160 0.205 0.425 0.435 0.060 0.070 0.004 0.006 0.870 BSC 0.096 0.106 0.190 0.223 0.594 0.606 0.591 0.601 0.124 0.130 0.394 0.404 0.395 0.405 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 27.05 27.30 9.65 9.91 4.06 5.21 10.80 11.05 1.52 1.78 0.10 0.15 22.10 BSC 2.44 2.69 4.83 5.66 15.09 15.39 15.01 15.27 3.15 3.30 10.01 10.26 10.03 10.29 0.13 REF 0.25 REF 0.38 REF B K 2 bbb M D TA M B M M (INSULATOR) ccc M TA M B R M bbb M TA TA M B N B M (LID) M (LID) Freescale Semiconductor, Inc... ccc M M C H S aaa T SEATING PLANE M F (INSULATOR) TA M B M DIM A B C D E F G H K M N Q R S aaa bbb ccc E A A CASE 465D - 05 ISSUE D NI - 600 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF6522 - 70R3 8 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA- 70/D MRF6522 |
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